Abstract of Partial arsenic pressure and crystal orientation during the molecular beam epitaxy of GaAs on SrTiO3(001)   Partial arsenic pressure and crystal orientation during the molecular beam epitaxy of GaAs on SrTiO3(001) CHENG J. , CHETTAOUI A., PENUELAS J., GOBAUT B., REGRENY P., BENAMROUCHE A., ROBACH Y., HOLLINGER G., SAINT-GIRONS G., , , , , , , , , , , Journal of Applied Physics 107 (2010) A study of epitaxial growth of GaAs islands on (2 x 1) reconstructed SrTiO3(001) surface is presented. Under low arsenic partial pressures (PAs), GaAs islands are (001)-oriented, and increasing PAs leads to the progressive formation of (111)-oriented GaAs islands. This results from the competition between the formation of Ga-O and Ga-As bonds at the early stages of the growth, as supported by the analysis of the evolution of the island density with respect to PAs. (c) 2010 American Institute of Physics. {[}doi:10.1063/1.3407520]