Abstract of Direct growth of InAsP/InP quantum well heterostructures on Si using crystalline SrTiO3/Si templates   Direct growth of InAsP/InP quantum well heterostructures on Si using crystalline SrTiO3/Si templates GOBAUT B. , PENUELAS J., CHENG J., CHETTAOUI A., LARGEAU L., HOLLINGER G., SAINT-GIRONS G. Applied Physics Letters 97 (2010) Integrating III-V semiconductors on Si is one of the major challenges of epitaxial growth and presents important applicative interest. We describe here an approach based on the use of crystalline SrTiO3 (STO)/Si templates. The structural and optical properties of InAsP/InP quantum well heterostructures grown directly on Si and on STO/Si templates are compared. Using STO/Si templates strongly improves the structural properties of the III-V heterostructure, and allows observing room-temperature photoluminescence from the quantum well. (C) 2010 American Institute of Physics. {[}doi:10.1063/1.3520143]