Abstract of Optically active defects in an InAsP/InP quantum well monolithically grown on SrTiO3/Si(001)   Optically active defects in an InAsP/InP quantum well monolithically grown on SrTiO3/Si(001) CHENG J. , AVILES A., EL AKRA A., BRU-CHEVALLIER C., LARGEAU L., PATRIARCHE G., REGRENY P., BENAMROUCHE A., ROBACH Y., HOLLINGER G., SAINT-GIRONS G. Applied Physics Letters 232116 95 (2009) Full pdf The optical properties of an InAsP/InP quantum well grown on a SrTiO3 001 substrate are analyzed. At 13 K, the photoluminescence yield of the well is comparable to that of a reference well grown on an InP substrate. Increasing the temperature leads to the activation of nonradiative mechanisms for the sample grown on SrTiO3. The main nonradiative channel is related to the thermal excitation of the holes to the first heavy hole excited state, followed by the nonradiative recombination of the carriers on twins and/or domain boundaries, in the immediate vicinity of the well.