 Self-assembled Ge nanocrystals on BaTiO3/SrTiO3/Si(001)LARGEAU L. , PATRIARCHE G., SAINT-GIRONS G., DELHAYE G., HOLLINGER G. Applied Physics Letters 031904 92 (2008) Full pdf The structure of Ge nanocrystals (NC) grown on BaTiO3/SrTiO3/Si(001) is studied by high resolution transmission electron microscopy. The Ge NC are fully relaxed with {111}, {112}, {110}, {113} planes parallel to the interface. These orientations allow to |
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